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Freescale Semiconductor Technical Data
Document Number: MRF373A Rev. 7, 9/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
470 - 860 MHz, 75 W, 32 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs
CASE 360B - 05, STYLE 1 NI - 360 MRF373ALR1
CASE 360C - 05, STYLE 1 NI - 360S MRF373ALSR1
Table 1. Maximum Ratings
Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C MRF373ALR1 MRF373ALSR1 Storage Temperature Range Case Operating Temperature Operating Junction Temperature Tstg TC TJ Symbol VDSS VGS PD Value - 0.5, +70 - 0.5, +15 197 1.12 278 1.59 - 65 to +150 150 200 Unit Vdc Vdc W W/C W W/C C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case MRF373ALR1 MRF373ALSR1 Symbol RJC Value 0.89 0.63 Unit C/W
Table 3. ESD Protection Characteristics
Test Conditions Human Body Model Machine Model MRF373ALR1 MRF373ALSR1 Class 1 (Minimum) M2 (Minimum) M1 (Minimum)
(c) Freescale Semiconductor, Inc., 2008. All rights reserved.
MRF373ALR1 MRF373ALSR1 1
Freescale Semiconductor RF Product Device Data
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 28/32 volt transmitter equipment. * Typical CW Performance at 860 MHz, 32 Volts, Narrowband Fixture Output Power -- 75 Watts Power Gain -- 18.2 dB D Efficiency -- 60% * Capable of Handling 10:1 VSWR @ 32 Vdc, 860 MHz, 75 Watts CW Output Power Features * Integrated ESD Protection * Excellent Thermal Stability * Characterized with Series Equivalent Large - Signal G Impedance Parameters * Low Gold Plating Thickness on Leads. L Suffix Indicates 40 Nominal. S * RoHS Compliant * In Tape and Reel. R1 = 500 units per 32 mm, 13 inch Reel.
MRF373ALR1 MRF373ALSR1
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Drain- Source Breakdown Voltage (VGS = 0 Vdc, ID =1 A) V(BR)DSS IDSS IGSS 70 -- -- -- -- -- -- 1 1 Vdc Symbol Min Typ Max Unit
Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 V, ID = 200 A) Gate Quiescent Voltage (VDS = 32 V, ID = 100 mA) Drain- Source On - Voltage (VGS = 10 V, ID = 3 A) Dynamic Characteristics Input Capacitance (VDS = 32 V, VGS = 0, f = 1 MHz) Output Capacitance (VDS = 32 V, VGS = 0, f = 1 MHz) Reverse Transfer Capacitance (VDS = 32 V, VGS = 0, f = 1 MHz) Functional Characteristics (50 ohm system) Common Source Power Gain (VDD = 32 V, Pout = 75 W CW, IDQ = 200 mA, f = 860 MHz) Drain Efficiency (VDD = 32 V, Pout = 75 W CW, IDQ = 200 mA, f = 860 MHz)
Adc
VGS(th) VGS(Q) VDS(on)
2 2.5 --
2.9 3.3 0.41
4 4.5 0.45
Vdc Vdc Vdc
Ciss Coss Crss
-- -- --
98.5 49 2
-- -- --
pF pF pF
Gps
16.5 56
18.2 60
-- --
dB %
MRF373ALR1 MRF373ALSR1 2 Freescale Semiconductor RF Product Device Data
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
Zero Gate Voltage Drain Current (VDS = 32 Vdc, VGS = 0 Vdc)
Adc
R3 VGG R2 C12 C14 C17 C13 C7 C1 C9 CUT OUT AREA C8 C2 C3 C4 C16 C15 L1 C5 C6 VDD
R1 C11 C10
RF INPUT
RF OUTPUT
MRF373A Rev 01 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 1. MRF373ALR1/ALSR1 Narrowband Test Circuit Component Layout Table 5. MRF373ALR1/ALSR1 Narrowband Test Circuit Component Layout Designations and Values
Designation C1, C2 C3 C4 C5, C10 C6 C7 C8 C9 C11 C12 C13 C14, C15 C16 C17 L1A R1, R2 R3 PCB 18 pF Chip Capacitors 12 pF Chip Capacitor 1.8 pF Chip Capacitor 51 pF Chip Capacitors 0.3 pF Chip Capacitor (Used only on the MRF373AS) 15 pF Chip Capacitor 10 pF Chip Capacitor 2.7 pF Chip Capacitor 0.5 pF Chip Capacitor 1000 pF Chip Capacitor 39 pF Chip Capacitor 470 pF Chip Capacitors 2.2 mF, 100 V Chip Capacitor 10 mF, 35 V Tantalum Capacitor 12 nH, Coilcraft 390 , 1/2 W Chip Resistors (2010) 1 k, 1/2 W Chip Resistor (2010) Arlon GX - 0300- 55, 30 mils, r = 2.55 Description
MRF373ALR1 MRF373ALSR1 Freescale Semiconductor RF Product Device Data 3
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
TYPICAL CHARACTERISTICS
20 IDQ = 500 mA 400 mA 300 mA 200 mA 17 100 mA 16 15 1 10 Pout, OUTPUT POWER (WATTS) CW 100 VDD = 32 Vdc f = 860 MHz
19 G ps , POWER GAIN (dB)
18
Figure 2. Power Gain versus Output Power
30 VDD = 32 Vdc Pout = 75 W (CW) IDQ = 200 mA
62
25
60 IRL , DRAIN EFFICIENCY (%)
20
Gps
58
15
56
10
54
5 800
820
840
860
880
900
52 920
f, FREQUENCY (MHz)
Figure 3. Performance in Narrowband Circuit
200 C oss , C iss , CAPACITANCE (pF)
20
150
15
100
Ciss
10
50
Coss Crss
5
0 0 10 20 30 40 50 VDS, DRAIN SOURCE VOLTAGE (VOLTS)
0 60
Figure 4. Capacitance versus Voltage
MRF373ALR1 MRF373ALSR1 4 Freescale Semiconductor RF Product Device Data
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
G ps , POWER GAIN (dB) IRL, INPUT RETURN LOSS (dB)
C rss , CAPACITANCE (pF)
Zo = 2 Zload Zsource f = 875 MHz f = 845 MHz f = 875 MHz
f = 845 MHz
VDD = 32 V, IDQ = 200 mA, Pout = 75 W CW f MHz 845 860 875 Zsource 0.58 - j0.29 0.56 - j0.11 0.56 + j0.06 Zload 1.60 + j0.07 1.65 + j0.22 1.79 + j0.38
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 5. Series Equivalent Source and Load Impedance
MRF373ALR1 MRF373ALSR1 Freescale Semiconductor RF Product Device Data 5
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
PACKAGE DIMENSIONS
2X
B
G
1
Q aaa
M
TA
M
B
M
NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. INCHES MIN MAX 0.795 0.805 0.225 0.235 0.125 0.175 0.210 0.220 0.055 0.065 0.004 0.006 0.562 BSC 0.077 0.087 0.220 0.250 0.355 0.365 0.357 0.363 0.125 0.135 0.227 0.233 0.225 0.235 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.19 20.45 5.72 5.97 3.18 4.45 5.33 5.59 1.40 1.65 0.10 0.15 14.28 BSC 1.96 2.21 5.59 6.35 9.02 9.27 9.07 9.22 3.18 3.43 5.77 5.92 5.72 5.97 0.13 REF 0.25 REF 0.38 REF
(FLANGE) 2X
B
2
D bbb M T A
2X M
K
(LID)
B
M
R
ccc N ccc
M
M
TA
M
B
M
(LID)
TA C
M
B
M
H
F
E
(INSULATOR)
S
T
(INSULATOR)
SEATING PLANE
aaa TA
M
M
TA
M
B
M
DIM A B C D E F G H K M N Q R S aaa bbb ccc
M
bbb
M
B
M
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
A
A
CASE 360B - 05 ISSUE G NI - 360 MRF373ALR1
MRF373ALR1 MRF373ALSR1 6 Freescale Semiconductor RF Product Device Data
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
3
MRF373ALR1 MRF373ALSR1 Freescale Semiconductor RF Product Device Data 7
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
MRF373ALR1 MRF373ALSR1 8 Freescale Semiconductor RF Product Device Data
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 7 Date Sept. 2008 Description * Replaced Case Outline 360C - 05, Issue E with Issue F, p. 7 - 8. * Added Product Documentation and Revision History, p. 9
MRF373ALR1 MRF373ALSR1 Freescale Semiconductor RF Product Device Data 9
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
How to Reach Us:
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MRF373ALR1 MRF373ALSR1
Rev. 10 7, 9/2008 Document Number: MRF373A
Freescale Semiconductor RF Product Device Data
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN

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